![]() ![]() However, using the transistor side-gate design does not reduce the device footprint in the circuits, and none of the existing multi-gate designs aimed to reduce the transistor number for circuit simplification. used a multi-gate structure to achieve a versatile control of transistors 2, whereas fin field-effect transistors (FinFETs) were employed in other studies 8. However, compared to the structure proposed in this study, their device is considerably more complex. ![]() used multiple transistor designs to improve the accuracy and reliability of temperature sensors 9. Biocircuits are sensitive to working conditions such as high temperatures and incompatible with existing well-developed foundry lines 18, 19. For instance, quantum logic gates can be scaled down with the existing silicon technologies however, extremely low temperatures are needed as their working conditions 20. Such designs have been effective for updating circuits, but they are still far from being applied on a large industrial scale. Up to date, several designs, materials, and methods have been proposed for miniaturizing logic gates, such as two-dimensional material facilitated designs, quantum logic gates, biocircuits and nanotube gates 11, 12, 13, 14, 15, 16, 17, 18, 19. To fulfill this goal, advanced designs and materials are constantly being proposed for logic gates and memory devices, which are the fundamental functional units of integrated circuits 1, 6, 7, 10. The era of big data requires advanced strategies for achieving a higher density of circuits devices while entailing less sophisticated fabrication techniques 2, 8, 9. The miniaturization of integrated circuits and the relentless increase of device densities, which is described by the Moore’s law, have made it critical to constantly render breakthroughs in designs to overcome any associated manufacturing challenges 1, 2, 3, 4, 5, 6, 7. The foundry-line-compatible one-transistor design has great potential for immediate and widespread applications in next-generation multifunctional electronics. In particular, our design could mimic the artificial synapses in three dimensions while simultaneously being implemented by standard silicon-on-insulator process technology. More importantly, the proposed configuration could simultaneously provide the multi-functionalities of logic gates, memory, and artificial synapses. ![]() Here, we propose a silicon-foundry-line-based multi-gate one-transistor design to simplify the conventional multi-transistor logic gates into one-transistor gates, thus reducing the circuit footprint by at least 40%. However, these strategies are still far from being widely applicable owing to their incompatibility with the modern silicon-based foundry lines. Logic gates are fundamental components of integrated circuits, and integration strategies involving multiple logic gates and advanced materials have been developed to meet the development requirements of high-density integrated circuits. ![]()
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